Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology-Reference-Cited by-同舟云学术

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Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology

Published:1982-04 Issue:4 Volume:29 Page:547-553
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang K.L.,Holloway T.C.,Pinizzotto R.F.,Sobczak Z.P.,Hunter W.R.,Tasch A.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31851/01482238.pdf?arnumber=1482238

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Refractory Materials, Electronic Applications of;digital Encyclopedia of Applied Physics;2003-04-15

2. Improving the electrical integrity of Cu-CoSi/sub 2/ contacted n/sup +/p junction diodes using nitrogen-incorporated Ta films as a diffusion barrier;IEEE Transactions on Electron Devices;2002-11

3. Metal gates for advanced CMOS technology;SPIE Proceedings;1999-09-01

4. Gate oxide reliability concerns in gate-metal sputtering deposition process: an effect of low-energy large-mass ion bombardment;Microelectronics Reliability;1999-03

5. The effect of annealing on resistivity of low pressure chemical vapor deposited titanium diboride;Journal of Applied Physics;1991-06

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