An 8-bit, 4-phase surface channel charge-coupled device on InP
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31852/01482285.pdf?arnumber=1482285
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electrical transport properties of Ru/Cu/n-InP Schottky barrier diode based on temperature-dependent I–V and C–V measurements;Indian Journal of Physics;2012-06-21
2. Investigation on deep level defects in rapid thermal annealed undoped n-type InP;Journal of Materials Science: Materials in Electronics;2009-05-07
3. Deep levels in undoped bulk InP after rapid thermal annealing;Journal of Applied Physics;1990-08-15
4. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
5. Rapid thermal anneal in InP, GaAs and GaAs/GaAlAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1987-01
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