Charge emission from interface states at silicon grain boundaries by thermal emission and thermionic-field emission

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Charge emission from interface states at silicon grain boundaries by thermal emission and thermionic-field emission—Part I: Theory

Published:1984-10 Issue:10 Volume:31 Page:1365-1369
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

De Groot A.W.,Card H.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31907/01484002.pdf?arnumber=1484002

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2. A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors;Journal of Applied Physics;2009-07-15

3. Reversible increase of photocurrents in excimer laser-crystallized silicon solar cells;Solar Energy Materials and Solar Cells;2008-11

4. Phenomenological model of anomalously high photovoltages generated in obliquely deposited semiconductor films;Journal of Applied Physics;2008-01-15

5. Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions;PHILOS MAG B;2001

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