Analytical model and characterization of small geometry MOSFET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31878/01483069.pdf?arnumber=1483069
Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Two-dimensional analytical model to characterize novel MOSFET architecture: insulated shallow extension MOSFET;Semiconductor Science and Technology;2007-07-19
2. A fringing field dependent 2-D model for non-uniformly doped short channel MOSFETs;International Journal of Electronics;1999-04
3. SOI CMOS Devices—Basic;CMOS VLSI Engineering;1998
4. Critical MOSFETs operation for low voltage/low power IC's: Ideal characteristics, parameter extraction, electrical noise and RTS fluctuations;Microelectronic Engineering;1997-12
5. Modeling narrow-channel effect in VLSI mesa-isolated SOI MOS devices using a quasi-two-dimensional approach;Solid-State Electronics;1996-09
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