A fringing field dependent 2-D model for non-uniformly doped short channel MOSFETs-Reference-Cited by-同舟云学术

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A fringing field dependent 2-D model for non-uniformly doped short channel MOSFETs

Published:1999-04 Issue:4 Volume:86 Page:381-390
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

SALEEM RUBEENA,THOMAS CIBY,HALDAR SUBHASIS,GUPTA R. S.

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/002072199133300

Reference17 articles.

1. The inverse-narrow-width effect

2. A model of a narrow-width MOSFET including tapered oxide and doping encroachment

3. Characterization of the inverse-narrow-width effect

4. MOSFET Models for VLSI Circuit Simulation

5. An analytical model for the gate capacitance of small-geometry MOS structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOSFET Modeling;Encyclopedia of RF and Microwave Engineering;2005-04-15

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