A 1/2-in. CCD image sensor overlaid with a hydrogenated amorphous silicon-Reference-Cited by-同舟云学术

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A 1/2-in. CCD image sensor overlaid with a hydrogenated amorphous silicon

Published:1985-08 Issue:8 Volume:32 Page:1495-1498
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chikamura T.,Komeda T.,Ishiko D.,Yoshino M.,Nakayama M.,Yano K.,Aoki Y.,Ueno A.,Yamada T.,Ishihara T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31930/01484898.pdf?arnumber=1484898

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiplication Characteristics of a-Si:H p-i-n Photodiode Film in High Electric Field;Japanese Journal of Applied Physics;2003-04-30

2. Excess Noise Characteristics of Hydrogenated Amorphous Silicon p-i-n Photodiode Films;Japanese Journal of Applied Physics;2002-04-30

3. An epitaxially-grown charge modulation device;IEEE Transactions on Electron Devices;1997

4. Photodegradation for a hydrogenated amorphous silicon photoconversion layer in a solid-state image sensor;IEEE Transactions on Electron Devices;1992

5. A correlative coefficient multiplying (CCM) method for chrominance moire reduction in single-chip color video cameras;IEEE Transactions on Electron Devices;1991-05

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