Selective low-pressure silicon epitaxy for MOS and bipolar transistor application-Reference-Cited by-同舟云学术

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Selective low-pressure silicon epitaxy for MOS and bipolar transistor application

Published:1983-11 Issue:11 Volume:30 Page:1511-1515
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kurten H.,Voss H.-J.,Wonchan Kim ,Engl W.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31883/01483231.pdf?arnumber=1483231

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

3. Characterization and modeling of sidewall defects in selective epitaxial growth of silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05

4. Characterization of sidewall defects in selective epitaxial growth of silicon;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-05

5. Selective epitaxial growth of SiGe alloys—influence of growth parameters on film properties;Materials Science and Engineering: B;1994-12

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