Thermal effects in n-channel enhancement MOSFET's operated at cryogenic temperatures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31973/01486603.pdf?arnumber=1486603
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Introductory Chapter: Low-Temperature Technologies;Low-Temperature Technologies and Applications;2022-03-30
2. Steady-state over-current safe operation area (SOA) of the SiC MOSFET at cryogenic and room temperatures;Cryogenics;2022-03
3. Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry;Journal of Applied Physics;2021-10-21
4. Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications;Low-Temperature Technologies [Working Title];2021-06-07
5. Characterization and Modeling of Self-Heating in Nanometer Bulk-CMOS at Cryogenic Temperatures;IEEE Journal of the Electron Devices Society;2021
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