Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry-Reference-Cited by-同舟云学术

Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry

Published:2021-10-21 Issue:15 Volume:130 Page:155107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Choi Alexander Y.¹^ORCID,Esho Iretomiwa¹^ORCID,Gabritchidze Bekari²³^ORCID,Kooi Jacob⁴^ORCID,Minnich Austin J.¹^ORCID

Affiliation:

1. Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, USA

2. Division of Physics, Mathematics, and Astronomy, California Institute of Technology, Pasadena, California 91125, USA

3. Department of Physics, University of Crete, GR-70 013 Heraklion, Greece

4. NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109, USA

Funder

National Science Foundation

National Science Foundation Graduate Research Fellowship

Jet Propulsion Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0063331

Reference51 articles.

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2. Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004

3. J. J. Bautista, J. G. Bowen, N. E. Fernandez, Z. Fujiwara, J. Loreman, S. Petty, J. L. Prater, R. Grunbacher, R. Lai, M. Nishimoto, M. R. Murti, and J. Laskar, “Cryogenic, x-band and ka-band InP HEMT based LNAS for the deep space network,” in 2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542) (IEEE, 2001), Vol. 2, pp. 2/829–2/842.

4. A quantum engineer's guide to superconducting qubits

5. Cryogenic Control Architecture for Large-Scale Quantum Computing

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