Electrical characteristics and contact resistance of B+-and BF2+-implanted silicon diodes with furnace and rapid thermal annealing-Reference-Cited by-同舟云学术

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Electrical characteristics and contact resistance of B+-and BF2+-implanted silicon diodes with furnace and rapid thermal annealing

Published:1985-07 Issue:7 Volume:32 Page:1354-1357
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Simard-Normandin M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31929/01484870.pdf?arnumber=1484870

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells;Journal of Applied Physics;2015-11-23

2. Rapid thermal annealing of graphene-metal contact;Applied Physics Letters;2012-12-10

3. The Annealing Time and Temperature Dependence of Electrical Dopant Activation in High‐Dose BF 2 Ion Implanted Silicon;Journal of The Electrochemical Society;1994-11-01

4. Device performance of shallow junction PMOSFETs fabricated using low-energy ion implantation of B and BF2 into crystalline and Ge preamorphised silicon;Electronics Letters;1989

5. Optimization of the germanium preamorphization conditions for shallow-junction formation;IEEE Transactions on Electron Devices;1988-05

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