Packaging Design of 15 kV SiC Power Devices With High-Voltage Encapsulation-Reference-Cited by-同舟云学术

Packaging Design of 15 kV SiC Power Devices With High-Voltage Encapsulation

Published:2022-02 Issue:1 Volume:29 Page:47-53
ISSN:1070-9878
Container-title:IEEE Transactions on Dielectrics and Electrical Insulation
language:
Short-container-title:IEEE Trans. Dielect. Electr. Insul.

Author:

Li Junjie¹,Liang Yu¹,Mei Yunhui²^ORCID,Tang Xinling³,Lu Guo-Quan⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering, Tianjin University, Tianjin, China

2. School of Electrical Engineering, Tiangong University, Tianjin, China

3. State Grid Global Energy Interconnection Research Institute Company Ltd., Beijing, China

4. The Bradley Department of Electrical and Computer Engineering, and Department of Materials Science and Engineering, Center for Power Electronics Systems, Virginia Tech, Blacksburg, VA, USA

Funder

Chinese National Natural Science Foundation

Tianjin Municipal Science and Technology Bureau

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/94/9737443/09697085.pdf?arnumber=9697085

Reference27 articles.

1. Characterization of Nonlinear Field-Dependent Conductivity Layer Coupled With Protruding Substrate to Address High Electric Field Issue Within High-Voltage High-Density Wide Bandgap Power Modules

2. Non-Linear Conductivity Epoxy/SiC Composites for Emerging Power Module Packaging: Fabrication, Characterization and Application

3. Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors

4. Enhancement of the partial discharge inception voltage of DBCs by adjusting the permittivity of the encapsulation;bayer;Proc 9th Int Conf Integr Power Electron Syst (CIPS),2016

5. Basic study on partial discharge location in power module

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