Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge-Reference-Cited by-同舟云学术

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Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

Published:2011-09 Issue:9 Volume:32 Page:1179-1181
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hong B. H.,Cho N.,Lee S. J.,Yu Y. S.,Choi L.,Jung Y. C.,Cho K. H.,Yeo K. H.,Kim D.-W.,Jin G. Y.,Oh K. S.,Park D.,Song S.-H.,Rieh J.-S.,Hwang S. W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5995811/05944946.pdf?arnumber=5944946

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current;IEEE Electron Device Letters;2023-05

2. Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature;IEEE Electron Device Letters;2022-08

3. Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges;Scientific Reports;2021-09-20

4. Extraction of Interface Trap Density Through Synchronized Optical Charge Pumping in Gate-All-Around MOSFETs;IEEE Electron Device Letters;2020-11

5. Analysis and Comparison of Interface Trap for Single and 3D Stacked Nanowire FET;Journal of Nanoscience and Nanotechnology;2017-10-01

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