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Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs

  • Published:2012-03 Issue:3 Volume:33 Page:336-338
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Gnudi A.,Reggiani S.,Gnani E.,Baccarani G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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