Performance investigation of Ge-based dielectric modulated junctionless TFET as a label-free biosensor
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Link
https://link.springer.com/content/pdf/10.1007/s00339-024-07291-3.pdf
Reference31 articles.
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2. M. Verma, S. Tirkey, S. Yadav, D. Sharma, D.S. Yadav, Performance Assessment of A Novel Vertical Dielectrically Modulated TFET Based Biosensor. IEEE Trans. Electron Devices 64(9), 3841–3848 (2017). https://doi.org/10.1109/TED.2017.2732820
3. D. Sharma, D. Singh, S. Pandey, S. Yadav, P.N. Kondekar, Comparative analysis of full-gate and short-gate dielectric modulated electrically doped Tunnel-FET based biosensors. Superlattices Microstruct. 111, 767–775 (2017). https://doi.org/10.1016/j.spmi.2017.07.035
4. A. Anam, S. Anand, S.I. Amin, Design and Performance Analysis of Tunnel Field Effect Transistor with Buried Strained Si1−xGex Source Structure Based Biosensor for Sensitivity Enhancement. IEEE Sens. J. 20(22), 13178–13185 (2020)
5. A. Bandiziol, P. Palestri, F. Pittino, D. Esseni, and L. Selmi L, A TCAD based methodology to model the site-binding charge at ISFET/electrolyte interfaces. IEEE Trans. Electron Devices. 62(10), 3379–3386 (2015). DOI: https://doi.org/10.1109/TED.2015.2464251
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