High-Performance $\hbox{Ni}/\hbox{Lu}_{2}\hbox{O}_{3}/ \hbox{TaN}$ Metal–Insulator–Metal Capacitors-Reference-Cited by-同舟云学术

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High-Performance $\hbox{Ni}/\hbox{Lu}_{2}\hbox{O}_{3}/ \hbox{TaN}$ Metal–Insulator–Metal Capacitors

Published:2011-11 Issue:11 Volume:32 Page:1576-1578
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Mondal Somnath,Pan Tung-Ming

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6056714/05993495.pdf?arnumber=5993495

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3. Influence of Y₂O₃ Doped HfO₂ High-k Films on Electrical Properties of MOS and MIM Devices;2022 IEEE 5th International Conference on Knowledge Innovation and Invention (ICKII );2022-07-22

4. Critical parameters of high performance metal-insulator-metal nanocapacitors: A review;Materials Research Express;2019-11-20

5. Conduction mechanisms of MIM capacitors with ZrO2/SiO2/ZrO2 stacked dielectrics and Ni electrodes;Acta Physica Sinica;2017

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