Pole-Zero Approach to Analyze and Model the Kink in Gain-Frequency Plot of GaN HEMTs-Reference-Cited by-同舟云学术

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Pole-Zero Approach to Analyze and Model the Kink in Gain-Frequency Plot of GaN HEMTs

Published:2017-03 Issue:3 Volume:27 Page:266-268
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Aamir Ahsan Sheikh^ORCID,Ghosh Sudip,Khandelwal Sourabh,Chauhan Yogesh Singh

Funder

Ramanujan Fellowship Research Grant

Science and Engineering Research Board

Indian Space Research Organization

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/7875181/07865938.pdf?arnumber=7865938

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs;IEEE Transactions on Electron Devices;2024-03

2. Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach;IEEE Journal of the Electron Devices Society;2024

3. RF modeling – II;GaN Transistor Modeling for RF and Power Electronics;2024

4. Modeling approaches for GaN HEMTs;GaN Transistor Modeling for RF and Power Electronics;2024

5. GaN HEMTs;GaN Transistor Modeling for RF and Power Electronics;2024

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