Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS-Reference-Cited by-同舟云学术

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Adaptively Biased 60-GHz Doherty Power Amplifier in 65-nm CMOS

Published:2017-03 Issue:3 Volume:27 Page:296-298
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Chen Shichang^ORCID,Wang Gaofeng,Cheng Zhiqun,Qin Pei,Xue Quan^ORCID

Funder

National Natural Science Foundation of China

Zhejiang Provincial Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/7875181/07865996.pdf?arnumber=7865996

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and design of a GHz bandwidth adaptive bias circuit for an mmW Doherty amplifier;Analog Integrated Circuits and Signal Processing;2024-07

2. A symmetrical fully-integrated CMOS doherty power amplifier;Microelectronics Journal;2024-06

3. Efficient Wideband mmW Transceiver Front End for 5G Base Stations in 22-nm FD-SOI CMOS;IEEE Journal of Solid-State Circuits;2024-02

4. A Linearity-Improved 24–29-GHz GaN MMIC Doherty Power Amplifier With Reconfigurable Self-Adaptive Peaking Gate Bias Network;IEEE Transactions on Microwave Theory and Techniques;2024

5. Power amplifiers monolithic microwave integrated circuit design for 5G applications;New Materials and Devices Enabling 5G Applications and Beyond;2024

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