A 6–10 mW Power Amplifier at 290–307.5 GHz in 250 nm InP HBT

Author:

Griffith Zach,Urteaga Miguel,Rowell Petra,Pierson Richard

Funder

Teledyne Scientific Company IR&D,

Defense Advanced Research Projects Agency (DARPA) and the US Army Research Office (ARO) under the HiFIVE program, contract

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Highly-Compact 20-mW, 270–320-GHz InGaAs mHEMT Power Amplifier MMIC;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. Design of 340-GHz On-Chip Power Combiners for InP HBT PAs;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

3. A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band;Proceedings of the IEEE;2023-03

4. A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBT;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

5. A 2-stage, 140-GHz Class-B Power Amplifier Achieving 22.5% PAE at 17.3 dBm in a 250-nm InP HBT Technology;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19

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