A 220–275 GHz Direct-Conversion Receiver in 130-nm SiGe:C BiCMOS Technology

Author:

Eissa M. H.ORCID,Awny A.,Ko M.,Schmalz K.,Elkhouly M.,Malignaggi A.,Ulusoy A. C.,Kissinger D.

Funder

Deutsche Forschungsgemeinschaft through the DFG-AGS Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 335–407-GHz SiGe-Based Subharmonic Mixer Using a Fully Integrated LO Generation;IEEE Microwave and Wireless Technology Letters;2024-06

2. A 24–29.5-GHz Scalable 2 $\times$ 2 I-Q TX/RX Chipset With Streamlined IF Interfaces for DBF Systems;IEEE Transactions on Circuits and Systems I: Regular Papers;2024

3. A 223–276-GHz Cascadable FMCW Transceiver in 130-nm SiGe BiCMOS for Scalable MIMO Radar Arrays;IEEE Transactions on Microwave Theory and Techniques;2023-12

4. A D-band Wideband Double-Balanced Source-Driven Up-Conversion Mixer in 40-nm CMOS;2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT);2023-08-14

5. A 240-GHz 4-TX 4-RX 2-D-MIMO FMCW Radar Transceiver in 130-nm SiGe BiCMOS;IEEE Microwave and Wireless Technology Letters;2023-08

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