A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs-Reference-Cited by-同舟云学术

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A Double-Pulse Technique for the Dynamic I/V Characterization of GaN FETs

Published:2014-02 Issue:2 Volume:24 Page:132-134
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Santarelli Alberto,Cignani Rafael,Gibiino Gian Piero,Niessen Daniel,Traverso Pier Andrea,Florian Corrado,Schreurs Dominique M. M. -P.,Filicori Fabio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/6736106/06679290.pdf?arnumber=6679290

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4. RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

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