Study of Nitride Crack Reduction For Electronic Power Devices
Author:
Affiliation:
1. Package R&D Nexperia Hong Kong,Hong Kong,China
2. Innovation Department Nexperia,Stockport,United Kingdom
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10339391/10339529/10339530.pdf?arnumber=10339530
Reference10 articles.
1. On the Way to Zero Defect of Plastic-Encapsulated Electronic Power Devices—Part III: Chip Coating, Passivation, and Design
2. On the impact of the edge profile of interconnects on the occurrence of passivation cracks of plastic-encapsulated electronic power devices
3. Plastic ratcheting induced cracks in thin film structures
4. Mechanochemical synthesis of nanocrystalline metal powders
5. Stress analysis for passivation and interlevel-insulation film cracks in multilayer aluminum structures for plastic packaged LSI;Okikawa,1988
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