Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform

Published:2023-12-09 Issue: Volume:20 Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Tang Jinjin¹,Jiang Zuoheng¹,Wang Chengcai¹,Chen Junting¹,Chen Haohao¹,Zhang Yihan²,Zheng Zheyang²,Wang Xinyu¹,Ma Jun¹,Zhao Junlei¹,Liu Jianxun³,Sun Qian³,Hua Mengyuan¹

Affiliation:

1. Southern University of Science and Technology,Shenzhen,China

2. Hong Kong University of Science and Technology,Hong Kong,China

3. CAS,Suzhou Institute of Nano-Tech and Nano-Bionics,Suzhou,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413728.pdf?arnumber=10413728

Reference17 articles.

1. Changes to the Editorial Board

2. p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

3. Gallium nitride-based complementary logic integrated circuits

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin-Body GaN-on-Sapphire HEMT With Megahertz Switching Capability Under Prompt Irradiation Dose Rate Exceeding 10¹⁰ rad(Si)/s;IEEE Electron Device Letters;2024-08

2. A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High I _ON/I _OFF Ratio;IEEE Transactions on Electron Devices;2024-07

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP