High RA Dual-MTJ SOT-MRAM devices for High Speed (10ns) Compute-in-Memory Applications-Reference-Cited by-同舟云学术

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High RA Dual-MTJ SOT-MRAM devices for High Speed (10ns) Compute-in-Memory Applications

Published:2023-12-09 Issue: Volume:601 Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Song M. Y.¹,Chen K. L.²,Chen K. M.²,Chang K. T.¹,Wang I. J.²,Hsin Y. C.²,Lin C. Y.¹,Ambrosi E.¹,Khwa Win-San¹,Lu Y. L.¹,Hu C. Y.¹,Yang S. Y.²,Li S. H.²,Wei J. H.²,Lee T. Y.¹,Wang Y. J.³,Chang M. F.¹,Pai C. F.¹,Bao X. Y.⁴

Affiliation:

1. Taiwan Semiconductor Manufacturing Company,Corporate Research,Hsinchu,Taiwan

2. Industrial Technology Research Institute,EOSRL,Hsinchu,Taiwan

3. Taiwan Semiconductor Manufacturing Company,Embedded Technology Division,Hsinchu,Taiwan

4. Taiwan SemiconductorManufacturing Company,Corporate Research,San Jose,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413832.pdf?arnumber=10413832

Reference10 articles.

1. A crossbar array of magnetoresistive memory devices for in-memory computing

2. Compressed Sensing With Approximate Message Passing Using In-Memory Computing

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