Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP
Author:
Affiliation:
1. SK Hynix,R&D Division,Icheon,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9779263/9779243/09779247.pdf?arnumber=9779247
Reference8 articles.
1. Electro-Thermal Model for Thermal Disturbance in Cross-Point Phase-Change Memory
2. Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond
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