Micromagnetic Study of Edge-Damage Effects in Perpendicular CoFeB/MgO Magnetic Tunnel Junction
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/20/8742563/08660652.pdf?arnumber=8660652
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Defects on the Characteristics of CoFeB–MgO-Based MRAM Structure;SPIN;2023-10-31
2. Metrology and metrics for spin-transfer-torque switched magnetic tunnel junctions in memory applications;Journal of Magnetism and Magnetic Materials;2022-12
3. Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process;IEEE Electron Device Letters;2022-10
4. Etching damage induced performance degradation in spin transfer torque magnetic random access memory fabrication;Journal of Vacuum Science & Technology B;2021-09
5. Positive correlation between interlayer exchange coupling and the driving current of domain wall motion in a synthetic antiferromagnet;Applied Physics Letters;2021-07-19
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