No-Snapback LDMOS Using Adaptive RESURF and Hybrid Source for Ideal SOA-Reference-Cited by-同舟云学术

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No-Snapback LDMOS Using Adaptive RESURF and Hybrid Source for Ideal SOA

Published:2021 Issue: Volume:9 Page:902-908
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Toner B.^ORCID,Eisenbrandt S.^ORCID,Frank M.,Granzner R.^ORCID,Steinbeck L.^ORCID,Davis D.^ORCID,Dolny G. M.^ORCID,Johnson T. J.^ORCID,Richards W. R.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9359727/09552389.pdf?arnumber=9552389

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review;IEEE Transactions on Electron Devices;2024-06

2. Hybrid Source Laterally Diffused MOS Drain Engineering for ESD Robustness;IEEE Electron Device Letters;2023-12

3. 500 V breakdown voltage in β‐Ga₂O₃ laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm² power figure of merit;IET Circuits, Devices & Systems;2023-05-03

4. 500 V Breakdown Voltage in β-Ga 2 O 3 LDMOSFET With 108 MW/cm 2 Power Figure of Merit;2022-09-01

5. Investigating the Correlation Between Space Charge Modulation and ON-State Breakdown in Multiple RESURF DeMOS Devices;IEEE Access;2022

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