500 V Breakdown Voltage in β-Ga 2 O 3 LDMOSFET With 108 MW/cm 2 Power Figure of Merit

Abstract

Abstract Our work presents a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) with β-Ga2O3, which is a large bandgap semiconductor (β-LDMOSFET) for increasing breakdown voltage (VBR) and power figure of merit. The characteristics of β-LDMOSFET were analyzed to those of a standard LDMOSFET, such as VBR, ON-resistance (RON), power figure of merit (PFOM), and radio frequency (RF) performances. The fundamental purpose of this research is to use the high bandgap semiconductor instead of silicon material due to its large breakdown field of about 9 MV/cm. The β-LDMOSFET structure outperforms performance in the VBR, increasing to 500 V versus 84.4 V in a standard LDMOSFET design. The suggested β-LDMOSFET has RON ~ 2.3 mΩ.cm− 2 and increased the PFOM (VBR2/RON) to 108.6 MW/cm2.