A 1200V-class Ultra-low Specific On-resistance SiC Lateral MOSFET with Double Trench Gate and VLD Technique

Author:

Kong Moufu,Hu Zewei,Gao Jiacheng,Chen Zongqi,Zhang Bingke,Yang Hongqiang

Funder

Key R and D project of Science and technology plan of Sichuan province

National Natural Science Foundation of China

Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

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3. Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques;Microelectronics Journal;2024-08

4. SiC-on-insulator based lateral power device and it’ s analytical models;Results in Physics;2024-03

5. The Design of a 4H-SiC SGT MOSFET;2024 IEEE 4th International Conference on Power, Electronics and Computer Applications (ICPECA);2024-01-26

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