A dynamic measurement method for parasitic capacitances of high voltage SiC MOSFETs
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7298093/7309651/07309788.pdf?arnumber=7309788
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel Phase Shift Angle Compensation Method of DAB Converter Considering Parasitic Capacitance of SiC MOSFET;IEEE Access;2024
2. A Study on the Switching Model Technique of FET Packages;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-11
3. From the Measurement of C OSS–V DS Characteristic to the Estimation of the Channel Current in Medium Voltage SiC MOSFET Power Modules;IEEE Transactions on Instrumentation and Measurement;2023
4. Noise Analysis of Current Sensor for Medium Voltage Power Converter Enabled by Silicon-Carbide MOSFETs;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07
5. Voltage Slew Rate Design With Soft Switching Technique;2022 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific);2022-10-28
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