Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer application-Reference-Cited by-同舟云学术

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Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer application

Published:2010-09 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE Energy Conversion Congress and Exposition
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Author:

Wang Gangyao,Huang Xing,Wang Jun,Zhao Tiefu,Bhattacharya Subhashish,Huang Alex Q.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5606065/5617696/05618069.pdf?arnumber=5618069

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Sensorless Capacitor Voltage Balancing Method for the Modular Multilevel DC Transformer With Diode-Clamped Circuits;IEEE Transactions on Power Electronics;2024-06

2. Parasitic Capacitive Couplings in Medium Voltage Power Electronic Systems: An Overview;IEEE Transactions on Power Electronics;2023-08

3. Very Accurate Output Voltage Estimation on Primary-side for LLC Resonant Solid-State-Transformer (SST);Journal of Electrical Engineering & Technology;2023-07-19

4. Improvement of Surge Current Capability in SBD-embedded SiC MOSFETs by Introducing Trigger p-n Diodes;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. Demonstrations of high voltage SiC materials, devices and applications in the solid state transformer;Journal of Crystal Growth;2023-02

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