Author:
Yang Fei,Tang Xinling,Wei Xiaoguang,Sang Ling,Liu Rui,Bai Song,Peng Tonghua,Zhao Guoliang,Yang Peng,Yang Tongtong,Tang Guangfu
Funder
State Grid Corporation of China
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. K. Melnyk, O. Kiselychnyk, J.O. Gonzalez, C. Antaloae, M. Antoniou, Analysis of SI IGBT and SIC MOSFET three phase inverter technologies in HEV, P-HEV and EV applications, in: 11th International Conference on Power Electronics, Machines and Drives (PEMD 2022), 2022, pp. 625-629, doi: 10.1049/icp.2022.1127.
2. B. Bradel et al., Comparison of Dissipation Loss Reduction Rates of 1.2kV and1.7kV All-SiC Modules Against Si-IGBT Modules, in: PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2022, pp. 1-6, doi: 10.30420/565822114.
3. SiC trench MOSFET with reduced switching loss and increased short-circuit capability;Yang;IEEE Transactions on Electron Devices,2020
4. A. Kumar et al., Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes, 2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2017, pp. 208-212, doi: 10.1109/WiPDA.2017.8170548.
5. S. Mangkalajarn, C. Ekkaravarodome, S. Sukanna, A. Bilsalam, K. Jirasereeamongkul, K. Higuchi, Comparative study of Si IGBT and SiC MOSFET in optimal operation Class-E inverter for domestic induction cooker, 2019 Research, Invention, and Innovation Congress (RI2C), 2019, pp. 1-4, doi: 10.1109/RI2C48728.2019.8999967.
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