Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices-Reference-Cited by-同舟云学术

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Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices

Published:2015-09 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Jahdi Saeed,Alatise Olayiwola,Gonzalez Jose Ortiz,Ran Li,Mawby Phil

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7298093/7309651/07309975.pdf?arnumber=7309975

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism Analysis and Oscillation Suppression of the False Triggering Oscillation for Parallel-Connected GaN Devices;IEEE Transactions on Power Electronics;2024-11

2. Modeling the Effect of Gate-Drain Parasitic Capacitance of a SiC MOSFET in a Half-Bridge During the Soft Turn-Off and Hard Turn-On Transition;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. Evaluation of Current, Delay, and Temperature Influence and Diode Selection on the Switching Behavior of a SiC/Si Hybrid Switch;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit;IEEE Transactions on Power Electronics;2024-02

5. $\beta$-Ga₂O₃ in Power Electronics Converters: Opportunities & Challenges;IEEE Open Journal of Power Electronics;2024

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