1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications-Reference-Cited by-同舟云学术

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1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

Published:2012-02 Issue: Volume: Page:
ISSN:
Container-title:2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Singh Ranbir,Sundaresan Siddarth,Lieser Eric,Digangi Michael

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6158725/6165780/06166176.pdf?arnumber=6166176

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of the off-State Base-Emitter Voltage Requirement of the SiC BJT With a Regenerative Proportional Base Driver Circuit and Their Application in an Inverter;IEEE Transactions on Industrial Electronics;2020-09

2. DC Modeling and Geometry Scaling of SiC Low-Voltage MOSFETs for Integrated Circuit Design;IEEE Journal of Emerging and Selected Topics in Power Electronics;2019-09

3. Comparison of conventional and cascode drive of SiC BJTs;The Journal of Engineering;2019-04-15

4. Efficient base driver circuit for silicon carbide bipolar junction transistors;Electronics Letters;2018-12

5. High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors;IEEE Industrial Electronics Magazine;2015-09

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