Efficient base driver circuit for silicon carbide bipolar junction transistors-Reference-Cited by-同舟云学术

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Efficient base driver circuit for silicon carbide bipolar junction transistors

Published:2018-12 Issue:25 Volume:54 Page:1450-1452
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

McNeill N.¹,Stark B.H.²,Finney S.J.³,Holliday D.¹,Dymond H.²^ORCID

Affiliation:

1. Department of Electronic and Electrical EngineeringUniversity of StrathclydeGlasgowScotlandUnited Kingdom

2. Department of Electrical and Electronic EngineeringUniversity of BristolBristolUnited Kingdom

3. School of Engineering, University of EdinburghEdinburghScotlandUnited Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2018.7057

Reference8 articles.

1. High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors

2. Theoretical and Experimental Analyses of Safe Operating Area (SOA) of 1200-V 4H-SiC BJT

3. Gate oxide degradation of SiC MOSFET in switching conditions;Ouaida R.;Electron Device Lett.,2014

4. Temperature and switching rate dependence of crosstalk in Si‐IGBT and SiC power modules;Jahdi S.;Trans. Ind. Electron.,2016

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