GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz

Author:

Hughes Brian,Lazar James,Hulsey Stephen,Zehnder Daniel,Matic Daniel,Boutros Karim

Publisher

IEEE

Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study on gate‐source voltage oscillation suppression in SiC MOSFETs based on LCR parallel branch;IET Power Electronics;2024-06-25

2. An Ultra-High Efficiency High Power Density 140W PD3.1 AC-DC Adapter Using GaN Power ICs;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

3. Implementation of Phase Shift Ful1-Bridge Converter Using GaN FET for EV Charger;2021 IEEE International Future Energy Electronics Conference (IFEEC);2021-11-16

4. Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review;Frontiers in Energy Research;2021-11-15

5. Assessment of the Switching Characteristics of a commercial e-mode Power GaN Device Using a Dual Pulse Test Set-up;2021 IEEE 15th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG);2021-07-14

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