Electro-thermal co-simulation of two parallel-connected SiC-MOSFETs under thermally-imbalanced conditions
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8336027/8340970/08341422.pdf?arnumber=8341422
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
2. Active Autonomous Open-Loop Technique for Static and Dynamic Current Balancing of Parallel-Connected Silicon Carbide MOSFETs;Energies;2023-11-20
3. Junction temperature balance control for paralleled SiC MOSFETs based on active gate control;Microelectronics Reliability;2023-11
4. A Junction Temperature Balance Control for Parallel-Connected SiC MOSFETs;2023 IEEE 6th International Electrical and Energy Conference (CIEEC);2023-05-12
5. Electro-Thermal Co-design of a High-Density Power-Stage for a Reconfigurable-Battery-Assisted Electric-Vehicle Fast-Charger using Multi-Physics Co-simulation and Topology Optimization;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3