Investigation of 600 V GaN HEMTs for high efficiency and high temperature applications-Reference-Cited by-同舟云学术

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Investigation of 600 V GaN HEMTs for high efficiency and high temperature applications

Published:2014-03 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014
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Author:

Xu Zhuxian,Zhang Weimin,Xu Fan,Wang Fred,Tolbert Leon M.,Blalock Benjamin J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6784523/6803270/06803299.pdf?arnumber=6803299

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs;IET Power Electronics;2024-07

2. A Vertical GaN Split Gate Trench MOSFET Device with Reduced Switching Energy Losses;Springer Proceedings in Physics;2024

3. Is the GaN HEMT More Prone to Sustained Oscillations under Cryogenic Conditions?;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

4. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

5. Ferrite Beads Design to Improve Turn-Off Characteristics of Cascode GaN HEMTs: An Optimum Design Method;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06

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