Is the GaN HEMT More Prone to Sustained Oscillations under Cryogenic Conditions?
Author:
Affiliation:
1. Xi’an Jiaotong University,Department of Electrical Engineering,Xi’an,China
2. Intel,DuPont,Washington,USA
3. University of Arkansas,Department of Electrical Engineering,Arkansas,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10361838/10361943/10362695.pdf?arnumber=10362695
Reference18 articles.
1. Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications
2. Cryogenic Power Conversion Systems: The next step in the evolution of power electronics technology.
3. Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression
4. Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration
5. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices
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