Evaluation of 1.2 kV, 100A SiC modules for high-frequency, high-temperature applications
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7097563/7104313/07104439.pdf?arnumber=7104439
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimal Switching Oscillation Damper of SiC-MOSFET;2023 4th IEEE Global Conference for Advancement in Technology (GCAT);2023-10-06
2. Modeling and Analysis of Bridge-Leg Crosstalk of GaN HEMT Considering Staged Effect of Common-Source Inductance;2022 IEEE Energy Conversion Congress and Exposition (ECCE);2022-10-09
3. Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review;Frontiers in Energy Research;2021-11-15
4. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices;IEEE Transactions on Power Electronics;2020-12
5. A Survey on Switching Oscillations in Power Converters;IEEE Journal of Emerging and Selected Topics in Power Electronics;2020-03
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