A 10-MHz resonant gate driver design for LLC resonant DC-DC converters using GaN devices-Reference-Cited by-同舟云学术

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A 10-MHz resonant gate driver design for LLC resonant DC-DC converters using GaN devices

Published:2014-03 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014
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Author:

Long Yu,Zhang Weimin,Blalock Benjamin,Tolbert Leon,Wang Fred

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6784523/6803270/06803595.pdf?arnumber=6803595

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Frequency Doubler Gate Drive Circuit Suitable for High-Frequency Applications;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-02

2. Review of Resonant Gate Driver From the Perspective of Driving Energy and Time;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-10

3. A Comparison Review of the Resonant Gate Driver in the Silicon MOSFET and the GaN Transistor Application;IEEE Transactions on Industry Applications;2019-11

4. Power Stage and Feedback Loop Design for LLC Resonant Converter in High-Switching-Frequency Operation;IEEE Transactions on Power Electronics;2017-10

5. Multi‐resonant gate drive circuit of isolating‐gate GaN HEMTs for tens of MHz;IET Circuits, Devices & Systems;2017-01-16

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