Multi‐resonant gate drive circuit of isolating‐gate GaN HEMTs for tens of MHz

Author:

Hattori Fumiya1,Umegami Hirokatsu1,Yamamoto Masayoshi1

Affiliation:

1. Department of Electronic Function Systems EngineeringShimane University MatsueMatsueJapan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High-frequency Driving Circuit and Loss Analysis of SIC MOSFET Based on Discrete Components;Journal of Electrical Engineering & Technology;2024-01-02

2. Frequency Doubler Gate Drive Circuit Suitable for High-Frequency Applications;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-02

3. GaN based High Frequency Power Electronic Interfaces: Challenges, Opportunities, and Research Roadmap;2021 IEEE Power and Energy Conference at Illinois (PECI);2021-04-01

4. Current Source Gate Driver for GaN E-HEMT in Hard-Switched High Power Applications;2020 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM);2020-06

5. Analog/RF and Linearity Distortion Analysis of MgZnO/CdZnO Quadruple-Gate Field Effect Transistor (QG-FET);Silicon;2020-02-11

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