High Brightness GaN-Based Light-Emitting Diodes-Reference-Cited by-同舟云学术

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High Brightness GaN-Based Light-Emitting Diodes

Published:2007-06 Issue:2 Volume:3 Page:118-125
ISSN:1551-319X
Container-title:Journal of Display Technology
language:
Short-container-title:J. Display Technol.

Author:

Lee Ya-Ju,Lu Tien-Chang,Kuo Hao-Chung,Wang Shing-Chung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/9425/4211180/04211196.pdf?arnumber=4211196

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Broadband optical nonlinearity and all-optical switching features in low-defect GaN;Optics Express;2023-09-12

2. InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrate;Applied Surface Science;2018-10

3. [INVITED] Total-internal-reflection-based photomask for large-area photolithography;Optics & Laser Technology;2016-05

4. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons;Scientific Reports;2016-03-03

5. An improved electrophoretic deposition method for wafer level white pc-LED array packaging;Journal of Display Technology;2016

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