[INVITED] Total-internal-reflection-based photomask for large-area photolithography-Reference-Cited by-同舟云学术

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[INVITED] Total-internal-reflection-based photomask for large-area photolithography

Published:2016-05 Issue: Volume:79 Page:39-44
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Hung Shao-Kang,Lin Kung-Hsuan,Chen Cheng-Lung,Chou Chen-Hsun,Lin You-Chuan

Funder

Force Precision Instrument Ltd (grant number: FPIC-RD2015-MUS)

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Machining processes for sapphire wafers: a literature review;Li;Proc. Inst. Mech. Eng. Part B J. Eng. Manuf.,2011

2. Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN;Iwaya;Jpn. J. Appl. Phys.,1998

3. Renaissance and progress in crystal growth of nitride semiconductors;Akasaki;J. Cryst. Growth,1999

4. Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates;Mukai;Jpn. J. Appl. Phys.,1999

5. Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: a transmission electron microscopy study;Kim;J. Appl. Phys.,2010

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Precision Semiconductor Substrate Thickness Gauge Based on Spectral-Domain Interferometry;Photonics;2024-05-01

2. Transparent film with inverted conical microholes array for reflection enhancement;Applied Surface Science;2016-04

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