Thermal Resistance Formulation and Analysis of III-V FETs Based on DC Electrical Data

Author:

Root David E.,Xu Jianjun,Iwamoto Masaya

Publisher

IEEE

Reference9 articles.

1. A DC technique for determining GaAs MESFET thermal resistance

2. Measurement of the effect of self-heating in strained-silicon MOSFETs

3. Exact adjoint sensitivity analysis for neural based microwave modeling and design;xu;IEEE Trans on Microwave Theory and Techniques,2003

4. Estimate of III-V FET thermal resistance from DC electrical measurements using artificial neural networks;iwamoto;Reliabiity of Compound Semiconductors Workshop 2021,0

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1. Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2024-05

2. Compact Model Parameter Extraction via Derivative-Free Optimization;IEEE Access;2024

3. Knowledge‐based neural network with Bayesian optimization for efficient nonlinear RF device modeling;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-07-22

4. Benchmarking Measurement-Based Large-Signal FET Models for GaN HEMT Devices;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11

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