Benchmarking Measurement-Based Large-Signal FET Models for GaN HEMT Devices
Author:
Affiliation:
1. Stanford University,Department of Electrical Engineering,USA
2. Keysight Technologies Inc,Keysight Laboratories,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10186107/10186112/10186170.pdf?arnumber=10186170
Reference9 articles.
1. Exact adjoint sensitivity analysis for neural-based microwave modeling and design
2. Thermal Resistance Formulation and Analysis of III-V FETs Based on DC Electrical Data
3. Measurement-Based Non-Quasi-Static Large-Signal FET Model Using Artificial Neural Networks;xu;2006 IEEE MTT-S International Microwave Symposium Digest,0
4. Technology Independent Large Signal Non Quasi-Static FET Models by Direct Construction from Automatically Characterized Device Data
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A compact Non-Quasi-Static small-signal model for GaN HEMT;Microelectronics Journal;2024-06
2. Assessment and Comparison of Measurement-Based Large-Signal FET Models for GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2024-05
3. Compact Model Parameter Extraction via Derivative-Free Optimization;IEEE Access;2024
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