From Transistor Parameters to PA Circuit Performance (Invited)
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682210.pdf?arnumber=9682210
Reference45 articles.
1. Power amplifier PAE and ruggedness optimization by second harmonic control
2. Safe Operating Area from Self-Heating, Impact Ionization, and Hot Carrier Reliability for a SiGe HBT on SOI
3. Emulation of Load Modulated Amplifiers Using Tabulated Load-Pull Data From a Single Amplifier
4. RF Power Amplifier Design for Pseudo Envelope Tracking;retz;International Microwave Symposium (IMS) 2013,2013
5. Suitability of InP DHBTs in ET/APT Systems
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16
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