Charge Trapping in GaN Power Transistors: Challenges and Perspectives-Reference-Cited by-同舟云学术

Charge Trapping in GaN Power Transistors: Challenges and Perspectives

Published:2021-12-05 Issue: Volume: Page:
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Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Meneghini Matteo,Modolo Nicola,Nardo Arianna,De Santi Carlo,Minetto Andrea,Sayadi Luca,Koller Christian,Sicre Sebastien,Prechtl Gerhard,Meneghesso Gaudenzio,Zanoni Enrico

Funder

ECSEL Joint Undertaking (JU)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682455.pdf?arnumber=9682455

Reference23 articles.

1. Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

2. Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements

3. “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

4. The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

5. “Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

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3. $\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Methodology for Extracting Dynamic On-Resistance Testing Data in Gallium Nitride-Based Power Transistors;2023 3rd International Conference on Smart Cities, Automation & Intelligent Computing Systems (ICON-SONICS);2023-12-06

5. GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives;2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);2023-07-17