0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BV<sub>CE0</sub>

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0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BV_CE0 > 4.5 V

Published:2021-12-05 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Davy Nil,Nodjiadjim Virginie,Riet Muriel,Mismer Colin,Deng Marina,Mukherjee Chhandak,Renaudier Jeremie,Maneux Cristell

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682209.pdf?arnumber=9682209

Reference10 articles.

1. A multiline method of network analyzer calibration

2. 0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits

3. A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times

4. Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

5. Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InP DHBT On-Wafer RF Characterization and Small-Signal Modelling up to 220 GHz;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

2. InP DHBT test structure optimization towards 110 GHz characterization;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

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