Numerical experiment for 2500 V double gate bipolar-mode MOSFETs (DGIGBT) and analysis for large safe operating area (SOA)-Reference-Cited by-同舟云学术

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Numerical experiment for 2500 V double gate bipolar-mode MOSFETs (DGIGBT) and analysis for large safe operating area (SOA)

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Container-title:PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference
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Author:

Nakagawa A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/711/664/00018119.pdf?arnumber=18119

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Actively controlled anode auxiliary gate super-junction insulated gate bipolar transistor with extremely low Eoff;Semiconductor Science and Technology;2023-10-27

2. Collector-gate-controlled lateral IGBT for reduction of on-state voltage and turn-off loss;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

3. 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology;2020 IEEE International Electron Devices Meeting (IEDM);2020-12-12

4. Ultrafast and Low-Turn-OFF Loss Lateral IEGT With a MOS-Controlled Shorted Anode;IEEE Transactions on Electron Devices;2019-01

5. Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies;IEEE Transactions on Electron Devices;2019-01

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