Abstract
Abstract
When dealing with the super-junction insulated gate bipolar transistor (SJ-IGBT), due to its unipolar/bipolar mixed conduction mechanism, the approaches to improve its
V
on
–
E
off
are not exactly the same as for non-SJ IGBTs. In the pursuit of extremely low
E
off
, a planar auxiliary anode gate SJ-IGBT (AAG-SJ-IGBT) is proposed based on a 650 V SJ-IGBT to realize a unipolar turn-off as observed in SJ-MOSFETs accompanied by fast switching and extremely low
E
off
. The planar auxiliary anode gate provides similar effects but better feasibility than conventional trench ones. Sentaurus TCAD simulation results for the proposed AAG-SJ-IGBT indicate a 69% smaller
t
doff
and a 54% lower
E
off
than the FP-SJ-IGBT, and its
V
on
–
E
off
is significantly optimized from cathode-improved SJ-IGBTs. The analysis of carrier and current density reveals the static and dynamic characteristics of the AAG-SJ-IGBT and the principle for excellent
V
on
–
E
off
trade-off.
Funder
Chongqing Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献